Polishing apparatus, polishing head and polishing method

ABSTRACT

A polishing apparatus comprises a polishing plate ( 24 ), an abrasive cloth ( 25 ) attached to the surface of the polishing plate ( 24 ), a chuck ( 19 ) for holding and pressing one surface of a wafer ( 39 ) against the abrasive cloth ( 25 ), and a circular retaining ring ( 23 ) concentrically arranged on the periphery of the chuck ( 19 ). The retaining ring ( 23 ) is rotatable and vertically movable with respect to the chuck ( 19 ), and is pressed against the abrasive cloth ( 25 ) during the lapping step. The retaining ring ( 23 ) is lifted upward during the final polishing step, thereby preventing lapping grains from being brought into the final polishing stage. Accordingly, lapping and final polishing can be successively conducted using the same polishing head. With this structure, cost cutting of the apparatus can be realized, since lapping and final polishing are successively conducted using the same polishing head without bringing the lapping grains used for lapping into the final polishing stage.

TECHNICAL FIELD

The present invention relates to the manufacture of a semiconductorwafer or liquid crystal substrate or the like, and more particularlyrelates to an apparatus and polishing head for polishing the surface ofa polishing target material comprising a flat surface such as asemiconductor wafer or liquid crystal substrate, and the method for thepolishing thereof.

Herein, the term “final polishing” refers to the final polishing step ofthe polishing steps implemented in the manufacture of a wafer, and theterm “coarse polishing” refers to polishing steps other than for finalpolishing.

BACKGROUND ART

FIG. 7 is a flow diagram illustrating the normal steps involved in themanufacture of a mirror-surface wafer of the prior art. With referenceto the diagram, a general description will be given of a normal methodfor the manufacture of a mirror-surface wafer employed as a raw materialwafer for the production of a semiconductor devices.

First, a single crystal ingot is grown by means of the Czochralskimethod (CZ method) or the floating zone melting method (FZ method) orthe like (STEP 101). Because of distortions (warpage) in the peripheralshape of the grown single crystal ingot, the periphery of the ingot isground by a cylindrical grinding machine or the like in an outer shapegrinding step (STEP 102) to adjust the peripheral shape of the ingot.The ingot is sliced using a wire saw or the like in a slice step (STEP103) to produce a disc-shaped wafer of thickness of the order of 500 to1000 μm, and the periphery of the wafer is then further chamfered in achamfering step (STEP 104).

Following this, the wafer is flattened by planar grinding and/or lappingor the like (STEP 105), and a chemical polishing process is administeredthereon in an etching step (STEP 106). Furthermore, coarse polishing(STEP 107) and a final polishing (STEP 108) are implemented on the wafersurface, after which a wafer washing (STEP 109) is implemented toproduce a mirror-surface wafer.

A very high level of flatness has been demanded in the production ofhigh-precision devices in recent years for the production ofsemiconductor devices in which circuits are formed on the surface ofmirror-surface wafers obtained by way of these steps. A low level ofwafer surface flatness generates a problem whereby, because of thepartial lack of focus of the lens focal point that occurs duringexposure in the photolithography step, the formation of the minutepatterns of a circuit is difficult. In addition, the flattening of thesurfaces of not only semiconductor wafers but also other targetmaterials for polishing comprising a flat surface such as liquid crystalsubstrates is demanded.

For the manufacture of a wafer with a very high level of flatness suchas this the polishing of the wafer is regarded as extremely important.An example of a well-known general polishing apparatus for implementingthis polishing is an apparatus that comprises a disc-shaped polishingplate to which an abrasive cloth is affixed to the upper surface and awafer chuck for holding one surface of the wafer to be polished andpushing the other surface of the wafer against the abrasive cloth, thepolishing being implemented by the supplying of a slurry between thewafer and the abrasive cloth and the relative rotation of the wafer andthe polishing plate.

In addition, because the abrasive cloth is elastic, when polishing isimplemented with the wafer only pushed against the abrasive cloth, thewafer embeds slightly into the abrasive cloth. When this happens,because of the concentration of elastic stresses from the abrasive clothon the edge of the wafer, the pressure applied to the wafer is larger atthe peripheral part than the center part and results in the excesspolishing of the peripheral part of the wafer.

Apparatuses to alleviate this problem are available in which abrasivecloth deformation on the peripheral part of the wafer is suppressed soas to prevent excess polishing by the concentric arrangement of atoroidal presser ring with the periphery of the wafer chuck, and thepushing of the abrasive cloth by the presser ring at the desiredpressure. An example thereof is the polishing apparatus disclosed inU.S. Pat. No. 6,350,346 as shown in FIG. 8. In this polishing apparatusa presser ring 52 is provided on the outer side of a wafer chuck 51, thewafer chuck 51 and the presser ring 52 can be relatively rotated, andthe pressure force of each can be independently controlled. In addition,the presser ring 52 can be moved vertically with respect to a top ring53.

However, in actual practice the production of a presser ring 52 that isperfectly parallel to the abrasive cloth 54 is very difficult. Notably,because only the presser ring 52 can be moved vertically in thisconstitution, the presser ring 52 and the abrasive cloth 54 are notformed perfectly in parallel and a distribution of the pressuregenerated at the pressing ring surface occurs during polishing which,accordingly, sometimes results in a worsening of the level of flatnessof the wafer edge part worsens and the production of a polished wafer ofan asymmetric shape.

DISCLOSURE OF THE INVENTION

With the foregoing problems of the prior art in view, it is a firstobject of the invention pertaining to the present application to providea wafer polishing apparatus, and polishing method thereof, that preventsa worsening of the flatness of the wafer edge part and prevents theproduction of a polished wafer of an asymmetric shape.

In addition, it is a second object of the invention pertaining to thepresent application to facilitate a reduction in apparatus costs by,without introduction of the abrasive grain used in coarse polishing intothe final polishing stage, the implementation of coarse polishing andfinal polishing continuously using the same polishing head.

Furthermore, it is a third object of the invention pertaining to thepresent application to prevent the worsening of wafer flatness that hasits origins in the processing precision of the retainer ring.

To achieve the objects described above, a first invention pertaining tothe present application provides a polishing apparatus comprising apolishing plate provided with an abrasive cloth, a chuck for holding apolishing target material to bring the polishing target material intocontact with the abrasive cloth, and a retainer ring arranged in aperiphery of the chuck, the polishing target material being polished bythe abrasive cloth by a relative motion of the polishing plate and thechuck, characterized in that the retainer ring and the chuck can beindependently oscillated.

In addition, a second invention pertaining to the present applicationprovides a polishing apparatus comprising a polishing plate providedwith an abrasive cloth, a chuck for holding a polishing target materialto bring the polishing target material into contact with the abrasivecloth, and a retainer ring arranged in a periphery of the chuck, thepolishing target material being polished by the abrasive cloth by arelative motion of the polishing plate and the chuck, characterized inthat the retainer ring can vertically move and oscillate with respect tothe chuck.

Furthermore, a third invention, based on the first and secondinventions, is characterized in that one or a plurality of clearances tofacilitate the oscillation are provided.

In addition, a fourth invention, based on any of the first to thirdinventions, is characterized in that polishing is implemented while agap of a fixed range between the chuck and the retainer ring isconstantly maintained.

Furthermore, a fifth invention, based on the fourth invention, ischaracterized in that the range of the gap is between 0.5 mm and 2.0 mm.

In addition, a sixth invention, based on the fourth and fifthinventions, is characterized in that the distance between the center ofthe chuck and the center of the polishing target material is not morethan 0.5 mm.

Furthermore, a seventh invention, based on any of the first to sixthinventions, is characterized in that the retainer ring is rotatable withrespect to the chuck.

In addition, an eighth invention provides a method of wafer polishing inwhich, in a state in which a polishing liquid is interposed between apolishing target material and an abrasive cloth while the polishingtarget material held by a chuck is pushed against the abrasive cloth,the polishing of the polishing target material is implemented by theabrasive cloth by a relative motion of the chuck and polishing plate,characterized in that a retainer ring is provided to be verticallymovable in a periphery of the chuck, and a pushing force of the retainerring against the abrasive cloth is set in accordance with the polishingstep.

In addition, a ninth invention, based on the eighth invention, ischaracterized in that the polishing in a coarse polishing step isimplemented in a state in which the abrasive cloth is pushed by theretainer ring, and the polishing in a final polishing step isimplemented in a state in which the retainer ring is retracted from theabrasive cloth.

Furthermore, a tenth invention provides a method of wafer manufacturecomprising at least a coarse polishing step and a final polishing step,characterized in that a polishing head comprising a chuck for holding apolishing target material to bring it into contact with an abrasivecloth and a retainer ring arranged to be vertically movable in aperiphery of the chuck is employed and, the polishing in the coarsepolishing step is implemented in a state in which the abrasive cloth ispushed by the retainer ring, and the polishing in the final polishingstep is implemented in a state in which the retainer ring is retractedfrom the abrasive cloth, to implement the coarse polishing step and thefinal polishing step using the same polishing head.

By virtue of the fact that, based on the abovementioned disclosedinventions, the abovementioned retainer ring and the abovementionedchuck can be independently pressurized at the optimum pressure and,moreover, they can mutually oscillate, a wafer polishing apparatus andpolishing method therefor that facilitates the improvement of theflatness of the wafer edge part in the coarse polishing used forengendering flatness and prevents the production of a polished wafer ofan asymmetric shape can be produced.

In addition, based on the present inventions, because the polishing inthe abovementioned coarse polishing step is implemented in a state inwhich the abovementioned abrasive cloth is pushed by the abovementionedretainer ring and the polishing in the abovementioned final polishingstep is implemented in a state in which the abovementioned retainer ringis retracted from the abovementioned abrasive cloth, the abrasive grainused for the coarse polishing is not introduced into the final polishingstage. In addition, due to the continuous implementation of the coarsepolishing and the final polishing using the same polishing head, areduction in apparatus costs can be achieved.

Furthermore, based on the present inventions, because the abovementionedretainer ring can be relatively rotated with respect to theabovementioned wafer chuck, a worsening of wafer flatness that has itsorigin in the processing precision of the abovementioned retainer ringand eccentric wear of the abovementioned retainer ring can be preventedby this rotating mechanism.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a full block diagram of a wafer polishing apparatus pertainingto a first embodiment;

FIG. 2 is a cross section of a first stage 3 and a second stage 4 of atube pressure-type polishing head 11 pertaining to the first embodiment;

FIG. 3 is a vertical cross section of a third stage 5 of the tubepressure type polishing head 11 pertaining to the first embodiment;

FIG. 4 is a vertical cross section of a first stage 3 and a second stage4 of a bellows pressure-type polishing head 40 pertaining to a secondembodiment;

FIG. 5 is a vertical cross section of a third stage 5 of the bellowspressure-type polishing head 40 pertaining to the second embodiment;

FIG. 6A is a graph in which, for a wafer polished using a waferpolishing apparatus not comprising a retainer ring of the prior art, theSFQR of the elemental material wafer prior to polishing is expressed onthe horizontal axis and the SFQR of the wafer following polishing isexpressed on the vertical axis, FIG. 6B is a graph in which, for a waferpolished using a wafer polishing apparatus pertaining to the inventionof this application, the SFQR of the elemental material wafer prior topolishing is expressed on the horizontal axis and the SFQR of the waferfollowing polishing is expressed on the vertical axis, and FIG. 6C is agraph in which the distance between the retainer ring and the wafer inthe wafer polishing apparatus pertaining to the invention of thisapplication is expressed on the horizontal axis, and the SFQR of thewafer following polishing is expressed on the vertical axis.

FIG. 7 is a flow diagram summarizing the method for the manufacture of asemiconductor wafer;

FIG. 8 is a schematic view illustrating one example of the waferpolishing apparatus of the prior art;

FIG. 9 is a vertical cross section illustrating the state in which theretainer ring of a dual series airbag type polishing head 60 pertainingto a third embodiment of the present invention has been lowered;

FIG. 10 is a vertical cross section illustrating the state in which theretainer ring of the dual series airbag type polishing head 60pertaining to the third embodiment has been lifted;

FIG. 11 is a partial vertical cross section showing in detail theretainer ring of an air cylinder+airbag type polishing head 90pertaining to a fourth embodiment;

FIG. 12 is a partial vertical cross section showing the state in whichthe retainer ring of the air cylinder+airbag type polishing head 90pertaining to the fourth embodiment has been lowered; and

FIG. 13 is a partial vertical cross section showing a state in which theretainer ring of the air cylinder+airbag type polishing head 90pertaining to the fourth embodiment has been lifted.

BEST MODE FOR CARRYING OUT THE INVENTION

A detailed description of the wafer polishing apparatus pertaining tothe present invention is given below with reference to the diagrams.Provided there is no otherwise specific restricting description to thecontrary, there are no particular restrictions to the material type,dimensions, shape and so on of the constituent components described inthe embodiments below which constitute examples provided for the purposeof the description only for which the scope of the invention should notbe regarded as restricted thereto. In addition, although the descriptionof the following embodiments pertains to, as a specific example, thepolishing of a silicon wafer, the present invention is in no wayrestricted thereto and, accordingly, it goes without saying that thepresent invention can have application in other thin film bodies ofvarious kinds such as semiconductor substrates and liquid crystal glasssubstrates and so on.

Embodiment 1

First, a description will be given of a first embodiment with referenceto FIG. 1 to FIG. 3. FIG. 1 is a full block diagram of a wafer polishingapparatus of the present invention, FIG. 2 is a cross section of a firststage 3 and a second stage 4 of an airbag pressure-type polishing head11 pertaining to this embodiment, and FIG. 3 is a vertical cross sectionof a third stage 5 of the airbag pressure type polishing head 11pertaining to this embodiment.

First, a brief description of the constitution of the wafer polishingapparatus as a whole will be given with reference to FIG. 1. FIG. 1 is aplan view of a polishing apparatus 1 comprising the polishing head 11 ofthe present invention that comprises first to third stages 3, 4 and 5and a wafer load/unload stage 2.

The first stage 3 and second stage 4 form a coarse polishing step andthe third stage 5 forms a final polishing step, the coarse polishingstep being provided to control the removal of the processing damageincurred on the wafer surface in previous steps and to engender waferflatness, while the final polishing step is provided to support theremoval of the processing damage incurred in the coarse polishing stepand to engender wafer flatness. The division of the coarse polishinginto two steps is based on the relationship between the time requiredfor the coarse polishing and the time required for the final polishingand is designed with consideration to the overall through-put.

A cross-shaped polishing head support part 6 is provided in theupper-center part of the polishing apparatus 1, and the polishing headsupport part 6 is arranged with freedom to rotate within the horizontalplane about the vertical axis. Two polishing heads 11 are providedfacing vertical downward in each end of the polishing head support part6 making a total of eight polishing heads 11 overall.

FIG. 2 and FIG. 3 are vertical cross sections of the polishing heads 11fixed to the end of the polishing head support part 6 and a polishingplate 24 that is affixed to the bottom thereof and although, for theconvenience of the description, only the left half of one polishing head11 and polishing plate 24 are shown, an opposing symmetrical structureexists on the right side with respect to the center axis thereof. Thepolishing plate 24 of the first to third stages 3, 4 and 5 isdisc-shaped and is held horizontally and, as shown in FIG. 2, a coarsepolishing abrasive cloth 25 is affixed to the upper surface of thepolishing plate 24 in the first and second stages 3 and 4 and, as shownin FIG. 3, a final abrasive cloth 26 is affixed to the upper surface inthe third stage 5.

Because uniform distribution of the abrasive grain is essential from theviewpoint of increasing the efficiency of the polishing, a foamedmaterial such as urethane throughout which air bubbles are uniformlydispersed is employed as the coarse polishing abrasive cloth 25 and thefinal abrasive cloth 26 material, and these air bubbles function as aholding site for the abrasive grain. A spindle 27 is vertically linkedto the lower part of the polishing plate 24, and the spindle 27 islinked to the rotating shaft of a polishing plate rotating motor notshown in the diagram. The polishing plate 24 is driven by a polishingplate rotating motor to rotate in the horizontal plane about the spindle27. A polishing liquid supply nozzle not shown in the diagram isarranged above the center of the polishing plate 24, and the polishingliquid supply nozzle is connected to a polishing liquid supply tank notshown in the diagram.

In stages 3 to 5 two wafers 30 are simultaneously polished by twopolishing heads 11 and, following the completion of this polishing, aresent at regular timings to the next step in a continuous polishingprocess. At this time, prior to the movement from the coarse polishingstep of the second stage 4 to the final polishing step of the thirdstage 5, the wafers are temporarily moved to the load/unload stage 2where, in such a way that the abrasive grain attached to the polishinghead 11 in the coarse polishing step can be washed off with water, anozzle is arranged to spray a jet water flow in the load/unload stage 2.

Next, a detailed description will be given of the tube pressure-typepolishing head 11 of this embodiment with reference to FIG. 2. Thepolishing head 11 comprises a shaft 28, frame 29, airbag 15, wafer chuck19, retainer frame 36 and retainer ring 23 and so on. The referencesymbol 28 in the diagram refers to a hollow cylindrical shaft 28, andthe frame 29 is arranged on the periphery of this shaft. The frame 29has four female screw parts 29 a radially provided from the center axisof the shaft 28 at intervals of 90°, and the frame 29 is fixed to theshaft 28 by the screw-insertion of bolts 29 c through the female screwparts 29 a from the outer side.

An airbag 15 is formed by the fixing of a disc-shaped plate spring andplate rubber to the lower end part of the frame 29 and the use of thehollow part partitioned by the plate rubber and frame 29 as an airchamber 16. A disc-shaped wafer chuck 19 is fixed to the lower surfaceof the airbag 15. The upper-center part of the wafer chuck 19, whichconstitutes a porous ceramic plate hard chuck base, is connected to avacuum pump 56 by way of a vacuum pipe 32 that passes though the airbag15.

Meanwhile, the frame 29 comprises on the peripheral part of its uppersurface a cylindrical protruding part extending in the verticaldirection and, continuous with this protruding part, a flange partformed to project in the outer circumferential horizontal direction. Adonut-shaped airbag 17 is provided immediately below the flange part,and further there-below twelve compression springs 18 are provided atintervals of 30°. The retainer frame 36 is sandwiched and supportedbetween the airbag 17 and the compression springs 18.

The retainer frame 36, which is a toroidal member with a U-shape crosssection, comprises a retainer ring 23 in its lower surface. The retainerframe 36 comprises a flange part in its upper part formed to project inthe inner circumferential horizontal direction. A through-hole is formedin this flange part in such a way as to provide a prescribed clearancefor the outer surface of the cylindrical-shaped protruding part of theframe 29. The flange part is supported by the urging from below by thecompression springs 18 and the urging from above by the airbag 17.

Because the airbag 17 constitutes a single donut-shaped tube, theinterior air pressure is uniformly generated at the outer surface of thetube. Accordingly, by way of example, even when an eccentric load isapplied that pushes the retainer frame 36 of FIG. 2 upward on a part ofthe airbag 17 from the right side, this eccentric load is formeduniformly within the airbag 17 and generates a push-down force from theleft side of the airbag 17 that pushes the retainer frame 36 downward.As a result, the retainer frame 36 can be oscillated with respect to theframe 29 and centered with respect to the surface of the abrasive cloths25, 26.

In addition, the adoption of a constitution in which the retainer frame36 can be oscillated and centered in this way necessitates a mechanismfor maintaining the minimum gap between the retainer frame 36 and waferchuck 19. Accordingly, ball plungers 21 are provided vertically in twopositions, making an overall total of sixteen at intervals of 45° withrespect to the rotating shaft, along the length of a half-way part ofthe retainer frame 36. The reason the ball plungers 21 are verticallyprovided in two positions is because, even if the ball plungers 21 liftup accompanying the lifting of the retainer frame 36, the functionwhereby the minimum distance between the frame 29 and the retainer frame36 is maintained can be fulfilled by either of the ball plungers 21. Inaddition, by the provision of a mechanism by which this minimum gap canbe maintained, contact between the wafer that is affixed to the waferchuck 19 with a prescribed positional precision and the retainer ring 23can be prevented.

Furthermore, a ball bearing 22 is provided in a lower half-way part ofthe retainer frame 36, and the toroidal retainer ring 23 is fixed to thelower surface of the retainer frame 36 on the lower side from the ballbearing 22. The retainer ring 23 is arranged essentially concentricallyand horizontally with the wafer chuck 19 with a gap of 0.5 to 2.0 mmwith the adsorbed wafer and the periphery of the wafer chuck 19 that isof approximately the same outer diameter. The retainer ring 23, which issmoothly rotatable with the retainer frame 36 by means of the ballbearing 22, rotates relatively with the wafer chuck 19. As a result ofthis rotating mechanism a worsening of wafer flatness that has itsorigins in the processing precision of the retainer ring 23, eccentricwear of the retainer ring 23, and the generation of shear forcesgenerated in the retainer ring 23 (twist), can be prevented.

The airbag 17 is connected to an electro-pneumatic regulator R by way ofa retaining pressurizing pipe 31, and an air chamber 16 is connected toan electro-pneumatic regulator W by way of a wafer pressurizing pipe 33.A compressed air pump 57 is connected to the end of theelectro-pneumatic regulator R, and a compressed air pump 58 is connectedto the end of the electro-pneumatic regulator W.

Meanwhile, although not shown in the diagram, a timing pulley isprovided in the peripheral part of the upper part of the shaft 28. Thetiming pulley, by way of a timing belt, is connected to a timing pulleyprovided in a polishing head rotating motor. It should be noted that theupper-end part of the shaft 28 and base part of the polishing headrotating motor are linked to a cylinder fixed to the polishing headsupport part 6 and the polishing head 11 is vertically movable.

Although a hard chuck base composed of a porous ceramic plate isemployed as the wafer chuck 19 in this embodiment, a pin chuck, ringchuck or ball chuck may be employed as the wafer chuck 19. In addition,although sixteen ball plungers 21 formed at intervals of 45° and twelvecompression springs 18 formed at intervals of 30° are provided in thisembodiment, the number of ball plungers 21 and compression springs 18 isnot restricted thereto and, provided the number thereof is within arange by which the desired functions can be achieved, this number may behigher or lower.

Next, a description will be given with reference to FIG. 1 to FIG. 3 ofa method for the polishing of a wafer 30 based on the wafer polishingapparatus 1 of the constitution described above.

In the load/unload stage 2 the unpolished wafer 30 is moved directlybelow the wafer chuck 19 of the polishing head 11 by a wafer carrydevice 7. Next, due to the suction of the vacuum pump 56, a negativepressure is formed by way of the vacuum pipe 32 in the interior of theporous ceramic plate and the unpolished wafer 30 is adsorbed on to thelower surface of the wafer chuck 19. This adsorption-positioning isimplemented at this time in such a way so that the distance between thecenter of the wafer chuck 19 and the center of the unpolished wafer 30is not more than 0.5 mm. In the loading of the unpolished wafer 30 thepolishing head support part 6 is rotated 90° to the right and thepolishing head 11 on which the unpolished wafer has been adsorbed ismoved to the first stage 3.

Next, the electro-pneumatic regulator W is driven to supply compressedair from the compressed air pump 58 to the air chamber 16 by way of thewafer pressurizing pipe 33, and a state in which the airbag 15 in itsentirety is uniformly pushed at a pressure of 5 g/mm² is maintained bymeans of the air within the air chamber 16. Thereafter, the polishinghead 11 and polishing plate 24 are relatively rotated by the drive ofthe polishing head rotating motor and the polishing plate rotatingmotor, and the polishing liquid is supplied through the polishing liquidsupply nozzle. In this state a cylinder not shown in the diagram isdriven to lower the polishing head 11 until the wafer 30 contacts thecoarse polishing abrasive cloth 25.

The wafer 30 is subjected to a uniform pressure of 5 g/mm² across itswhole surface and pushed against the coarse polishing abrasive cloth 25for the target surface for polishing thereof to be polished flat.Because the airbag 15 is formed from a plate rubber and a plate spring,the wafer chuck 19 can be oscillated and centered to conform todistortions in the surface of the coarse polishing abrasive cloth 25.Accordingly, the wafer 30 is maintained in a constant parallel statewith respect to the surface of the coarse polishing abrasive cloth 25and the wafer is pushed at a uniform pressure over its entirety againstthe coarse polishing abrasive cloth 25.

During the implementation of the abovementioned coarse polishing stepthe electro-pneumatic regulator R is driven and compressed air issupplied to the airbag 17 from the compressed air pump 57 by way of theretaining pressurizing pipe 31. As a result, the airbag 17 expands and,resisting the compression springs 18, the retainer frame 36 is urgeddownward and the retainer ring 23 is pushed on to the coarse polishingabrasive cloth 25. Because the retainer frame 36 is supported by theairbag 17 and the compression springs 18, the retainer frame 36 and theretainer ring 23 can be oscillated and centered on the surface of thecoarse polishing abrasive cloth 25 independently of the wafer chuck 19.

Accordingly, a state in which the retainer ring 23 is parallel to thesurface of the coarse polishing abrasive cloth 25 is constantlymaintained and the retainer ring 23 is pushed over its entirety at auniform pressure on to the coarse polishing abrasive cloth 25. At thistime, in such a way that a retainer ring pressurizing force of 5 g/mm²equal to the wafer pressurizing force is formed, it is desirable for thecompressed air pressure supplied to the airbag 17 to be regulated. Bythe equalizing of the retainer ring pressurizing force with the waferpressurizing force, deformation of the coarse polishing abrasive cloth25 in the periphery of the wafer 30 can be suppressed to preventexcessive polishing. In addition, the retainer ring pressurizing forcecan be regulated in accordance with the final shape of the wafer 30following polishing.

In this way, the wafer pressurizing force can be regulated by theregulating of the air pressure supplied by the electro-pneumaticregulator W and the retaining pressurizing force can be regulated by theregulating of the air pressure supplied by the electro-pneumaticregulator R. Accordingly, the desired wafer pressurizing force andretaining pressurizing force can be set independently. In addition,because the wafer chuck 19 and the retainer ring 23 described abovecomprise independent automated centering functions each is constantlymaintained in parallel with the polishing surface of the coarsepolishing abrasive cloth 25.

In addition because ball plungers 21 are provided on the inner side ofthe retainer frame 36, the gap between the retainer ring 23 and thewafer chuck 19 can be set within a fixed range. The optimum polishingeffect can be produced in this embodiment mode when this gap is setbetween 0.5 mm and 2.0 mm. When the gap is 2.0 mm or more the flatnessof the wafer following polishing worsens.

Thereupon, taking the gap between the retainer ring 23 and the waferchuck 19 in the standard state is taken as 1.0 mmm, the gap between theball part of the ball plunger 21 and the frame 29 is 0.1 mm and thespring stroke of the ball plunger 21 is 0.4 mm. As a result, even whenthe retainer ring 23 and the wafer chuck 19 oscillate the gap isstabilized and fluctuates within a range of 0.5 mm to 1.5 mm.

A slurry or similar composed of a coarse polishing abrasive grain of SiCor SiO or the like of diameter of the order of 12 nm and a water-basedor oil-based liquid can be employed as the polishing liquid of thecoarse polishing step. The polishing head 11 and the polishing plate 24are relatively rotated while the polishing liquid is supplied in thisway, and the coarse polishing of the wafer 30 is implemented for 5minutes.

Following the implementation of coarse polishing, the cylinder is drivento lift the polishing head 11 and the polishing head support part 6 isrotated 90° to the right to move the polishing 11 to the second stage 4.

When the polishing head 11 is moved to the second stage 4, identical tothe action of the first stage 3, the polishing head 11 is lowered topolish the wafer 30. The point of difference with the first stage 3 interms of the processing conditions lies in the establishment of each ofthe wafer pressurizing force and the retaining pressurizing force as 2g/mm², and the adoption of a polishing time of 2 minutes.

Following the coarse polishing, the cylinder is driven to lift thepolishing head 11 and the polishing head support part 6 is rotated 180°to the right to move the polishing head 11 to the load/unload stage 2.

In order to prevent the introduction of the abrasive grain for coarsepolishing into the final polishing stage when the polishing head 11 ismoved to the load/unload stage 2, the abrasive grain attached to thetarget surface for polishing of the wafer 30 and the retainer ring 23 iswashed for 10 seconds by distilled water or ozone water using a jetwater flow jetted from a nozzle.

Following the washing of the polishing head 11, the polishing headsupport part 6 is rotated 90° to move the polishing head 11 to the thirdstage 5.

Because of the low wafer pressurizing force of 1 g/mm² the extent towhich the wafer 30 is embedded into the final abrasive cloth 26 isnegligible. Accordingly, there is no generation of the problem of aconcentration of the elastic stresses from the final abrasive cloth 26on the edge of the wafer 30 resulting in excessive polishing of theperiphery of the wafer. In addition, because the actual polished amountis small, there is no need for the use of a retainer ring 23.

Thereupon, in this embodiment, in the course of the movement to thethird stage 5, the pressure of the airbag 17 is released and theretainer ring 23 is retracted upward by the reactive force of thesprings 18. The extent of this movement is set to approximately 5 mm.This is to prevent introduction of the abrasive grain for coarsepolishing attached to the retainer ring 23 into the final polishingstage.

When the polishing head 11 is moved into the third stage 5, theelectro-pneumatic regulator W is driven to supply a compressed air tothe air chamber 16 from the compressed air pimp 58 by way of the waferpressurizing pipe 33, and a state in which the airbag 15 in its entiretyis pushed at a pressure of 1 g/mm² by the air within the air chamber 16is maintained. Thereafter, the polishing head 11 and polishing plate 24are relatively rotated by the drive of the polishing head rotating motorand the polishing plate rotating motor, and the polishing liquid issupplied through a polishing liquid supply nozzle. In this state acylinder not shown in the diagram is driven to lower the polishing head11 until the wafer 30 contacts the final abrasive cloth 26.

The wafer 30 is subjected to a uniform pressure of 1 g/mm² across itsentire surface and pushed against the final abrasive cloth 26 for thetarget surface for polishing thereof to be polished flat. Because theairbag 15 is composed of rubber and a plate spring, the air chuck 19 canbe oscillated and centered to conform to the surface shape of the finalabrasive cloth 26. Accordingly, the wafer 30 is maintained in a constantparallel state with respect to the final abrasive cloth 26 and the waferis pushed at a uniform pressure across its entirety against the finalabrasive cloth 26.

A slurry or similar composed of a coarse polishing abrasive grain of SiCand SiO or the like of diameter of the order of 5 to 500 nm and awater-based or oil-based liquid can be employed as the polishing liquidof the final polishing step. The polishing head 11 and the polishingplate 24 are relatively rotated while the polishing liquid is suppliedin this way, and the final polishing of the wafer 30 is implemented for5 minutes.

Following the implementation of the final polishing, the cylinder isdriven to lift the polishing head 11 and the polishing head support part6 is rotated 90° to the right to move the polishing 11 to theload/unload stage 2.

When the polishing head 11 is moved to the load unload stage 2 a carryhand not shown in the diagram of the wafer carry device 8 is moveddirectly below the wafer chuck 19. Next, when the vacuum pump 56 isstopped, the adsorption forces of the wafer chuck 19 are released andthe wafer 30 adsorbed on the wafer chuck 19 is loaded on the wafer carryhand whereupon, thereafter, it is carried out by the wafer carry device8. The steps for the polishing of the wafer 30 are completed inaccordance with the above.

Embodiment 2

Next, a description will be given of a second embodiment with referenceto FIG. 4 and FIG. 5. FIG. 4 is a vertical cross section of a firststage 3 and a second stage 4 of a bellows pressure-type polishing head40 pertaining to a second embodiment of the present invention, and FIG.5 is a vertical cross section of the third stage 5 of the bellowspressure-type polishing head 40 pertaining to this embodiment.

Because the overall constitution of this embodiment is identical to theoverall constitution of the first embodiment shown in FIG. 1, thedescription is given with reference to FIG. 4 and pertains only to thepoints of difference of the constitution of the polishing head 40. FIG.4 is a vertical cross section of the polishing head 40 fixed to the endof the polishing head support part 6 and a polishing plate 24 arrangedthere-below and, although, for the convenience of the description, onlythe left half of one polishing head 40 and polishing plate 24 is shown,an opposing symmetrical structure exists on the right side with respectto the center axis thereof.

The bellow pressure-type polishing head 40 of this embodiment comprisesa shaft 28, frame 47, bellows 45, 46, wafer chuck 19, guide pins 41, 44,ball bearing 42, and retainer ring 43 and so on. The reference symbol 28in the diagram refers to a hollow cylindrical shaft 28, and a frame 47is arranged on the outer circumference of this shaft. The frame 47 has 4female screw parts 47 a radially provided from the center axis of theshaft 28 at intervals of 90°, and the frame 47 is fixed to the shaft 28by the screw-insertion of bolts 47 c through the female screw parts 47 afrom the outer side.

An upper-part retainer frame 50 a, formed as a disc-shaped thin plate,is mounted on the outer circumferential lower surface of the frame 47.Two concentric cylindrical bellows 45 are fixed facing verticallydownward to the lower surface of the upper-part retainer frame 50 a, andthe lower ends of the bellows 45 are mounted on the upper surface of alower-part retainer frame 50 b formed as a disc-shaped thin plate. Atoroidal airtight space enclosed by the two bellows 45, the upper-partretainer frame 50 a and the lower-part retainer frame 50 b forms an airchamber 48.

A ball bearing 42 is further provided below the lower-part retainerframe 50 b, and a toroidal retainer ring 43 is fixed below the ballbearing 42. The retainer ring 43 is arranged essentially concentricallywith the wafer chuck 19 with a very small gap with the adsorbed waferand the peripheral part of the wafer chuck 19 of approximately the samediameter. The retainer ring 43 is formed as a constitution able to berelatively rotated smoothly with respect to the wafer chuck 19 by meansof the ball bearing 42. Using this rotating mechanism based on the ballbearing 42, a worsening of the wafer flatness that is attributed to theprocessing precision of the retainer ring 43, eccentric wear of theretainer ring 43, and the generation of shear stress that is generatedin the retainer ring 43 (twist) can be prevented.

Furthermore, because the retainer ring 43 is suspended from and held bythe bellows 45 and the bellows 45 are produced from Hastelloy or thelike and therefore expandable, the retainer ring 43 can be oscillatedwith respect to the frame 47. In addition, because the constitutionadopted is one in which the retainer ring 43 can be oscillated in thisway, in order for the fluctuations of the gap between the retainer ring43 and the wafer chuck 19 to be able to be maintained within a fixedrange, six cylindrical guide pins 41, provided vertically downward inthe upper-part retainer frame 50 a, and six guide pin receivers 38,formed from a plate material bent into an L-shape and fixed in the uppersurface of the lower-part retainer frame 50 b, are provided at intervalsof 60°. In order to maintain the oscillation within a fixed range, athrough-hole with-a prescribed clearance to the guide pins 41 isprovided in the guide pin receivers 38, and the guide pins 41 areinserted through these through-holes.

On the other hand, further on the inner side of the innercircumferential side of the bellows 45 a cylindrical-shaped bellows 46is affixed facing vertically downward to the lower end part of the frame47, and the wafer chuck 19 is fixed to the lower end of the bellows 46.An airtight space enclosed by the bellows 46 and the wafer chuck 19forms an air chamber 49.

Within the bellows 46, six cylinder guide pins 44, provided verticallydownward from the frame 47, and six guide pin receivers 39, formed froma plate material bent into an L shape from the wafer chuck 19, are fixedat intervals of 60°. In order to maintain the oscillation within a fixedrange, a through-hole with a prescribed clearance to the guide pins 44is provided in the guide pin receivers 39, and the guide pins 44 areinserted through these through-holes.

In addition, the wafer chuck 19 comprises a hard chuck base composed ofa porous ceramic plate, and the upper-center part thereof is connectedto the vacuum pump 56 by way of the vacuum pipe 32.

The air chamber 48 formed between the two bellows 45 is connected to theelectro-pneumatic regulator R by way of the retaining pressurizing pipe31, and the air chamber 49 is connected to the electro-pneumaticregulator W by way of the wafer pressurizing pipe 33. A compressed airpump 57 is connected to the end of the electro-pneumatic regulator R anda compressed air pump 58 is connected to the end of theelectro-pneumatic regulator W.

Although not shown in the diagram, a timing pulley is provided in theperipheral part of the upper part of the shaft 28. The timing pulley isconnected to a timing pulley provided in the polishing head rotatingmotor by way of a timing belt. It should be noted that the upper-endpart of the shaft 28 and the base part of the polishing head rotatingmotor are connected to a cylinder fixed to the polishing head supportpart 6 and the polishing head 11 is able to be moved vertically.

Although a hard chuck base composed of a porous ceramic plate isemployed as the wafer chuck 19 in this embodiment, a pin chuck, ringchuck or ball chuck may be employed as the wafer chuck 19. In addition,although six guide pins 41, 44 are provided at intervals of 60°,provided the number is within a range by which the desired functionsthereof can be achieved, the number of guide pins 41, 44 may be greateror smaller than six.

Next, a description is given below with reference to FIG. 1 and FIGS. 4and 5 of the method for the polishing of the wafer 30 using thepolishing apparatus 1 comprising the polishing head 40 described above.The polishing head 40 in the description of this embodiment replaces thepolishing head 11 of FIG. 1.

In the load/unload stage 2 the unpolished wafer 30 is moved directlybelow the wafer chuck 19 of the polishing head 40 by a wafer carrydevice 7. Next, due to the suction of the vacuum pump 56, a negativepressure is formed in the interior of the porous ceramic plate by way ofthe vacuum pipe 32, and the unpolished wafer 30 is adsorbed on to thelower surface of the wafer chuck 19. The adsorption-positioning isimplemented at this time in such a way that the distance between thecenter of the wafer chuck 19 and the center of the unpolished wafer 30is not more than 0.5 mm. In the loading of the unpolished wafer 30 thepolishing head support part 6 is rotated 90° to the right and thepolishing head 40 on which the unpolished wafer has been adsorbed ismoved to the first stage 3.

Next, as shown in FIG. 4, the electro-pneumatic regulator W is driven tosupply compressed air from the compressed air pump 58 to the air chamber49 by way of a wafer pressurizing pipe 33, and a state in which thewafer chuck 19 in its entirety is pushed uniformly at a pressure of 5g/mm² due to the air within the air chamber 49 is maintained.Thereafter, the polishing head 40 and polishing plate 24 are relativelyrotated by the drive of the polishing head rotating motor and thepolishing plate rotating motor, and the polishing liquid is suppliedthrough the polishing liquid supply nozzle. In this state, a cylindernot shown in the diagram is driven to lower the polishing head 40 untilthe wafer 30 contacts the coarse polishing abrasive cloth 25. The wafer30 is subjected to a uniform pressure of 5 g/mm² across its entiresurface to be pushed against the coarse polishing abrasive cloth 25 forthe target surface for polishing thereof to be polished flat.

Because the bellows 46 are produced from Hastelloy or the like andtherefore are expandable, the wafer chuck 19 is movable and can becentered to conform to the surface shape of the coarse polishingabrasive cloth 25. Accordingly, the parallel state of the wafer 30 withrespect to the coarse polishing abrasive cloth 25 is constantlymaintained and the coarse polishing abrasive cloth 25 is pushed at auniform pressure over the entirety of the wafer.

During the implementation of the coarse polishing step described above,the electro-pneumatic regulator R is driven and a compressed air ofhigher pressure than air pressure is supplied to the air chamber 48 byway of the retaining pressurizing pipe 31 from the compressed air pump57, and a state in which the lower-part retainer frame 50 b pushes theretainer ring 43 against the coarse polishing abrasive cloth 25 at apressure of 5 g/mm² due to the pressure of the air chamber 48 ismaintained. By the equalizing of the retainer ring pressurizing forceand the wafer pressurizing force in this way, deformation of the coarsepolishing abrasive cloth 25 in the peripheral part 30 of the wafer canbe suppressed to prevent excessive polishing. In addition, the retainerring pressurizing force can be regulated in accordance with the finalshape of the wafer 30 following polishing.

Here, because the retainer ring 43 is suspended to the frame 47 by meansof the bellows 45, the retainer ring 43 can oscillate independently ofthe wafer chuck 19 and can be centered to conform to the surface shapeof the coarse polishing abrasive cloth 25 independent of the centeringof the wafer chuck 19.

Accordingly, the retainer ring 43 is maintained in a constant parallelstate with the coarse polishing abrasive cloth 25 and the retainer ring43 is pushed against the coarse polishing abrasive cloth 25 at a uniformpressure across the entirety thereof. Because the wafer pressurizingforce is regulated by the regulating of the air pressure supplied to theair chamber 49 by the electro-pneumatic regulator W and the retainingpressurizing force is regulated by the regulating of the air pressuresupplied to the air chamber 48 by the electro-pneumatic regulator R inthis way, the wafer pressurizing force and the retaining pressurizingforce can be independently set to prescribed pressurizing forces. Inaddition, because the wafer chuck 19 and the retainer ring 43 compriseindependent automatic centering mechanisms in this way, each can beconstantly maintained in parallel with the abrasive cloth 25.

In addition, guide pins 41, 44 are provided in the polishing head 40,and the fluctuation of the gap between the retainer ring 43 and thewafer chuck 19 is set to within a fixed range. The optimum polishingeffect can be produced in this embodiment mode when this gap is between0.5 mm and 2.0 mm. When the gap is 2.0 mm or more the flatness of thewafer following polishing worsens. Thereupon, a through hole of a holediameter by which the gap between the retainer ring 43 and the waferchuck 19 lies-within the range of 0.5 mm to 2.0 mm is formed in theguide pin receivers 38, 39.

A slurry or similar composed of a coarse polishing abrasive grain of SiCand SiO of diameter of the order of 12 nm or the like and a water-basedor oil-based liquid can be employed as the polishing liquid of thecoarse polishing step. The polishing head 40 and the polishing plate 24are relatively rotated while the polishing liquid is supplied in thisway, and the coarse polishing of the wafer 30 is implemented for 5minutes.

Following the implementation of coarse polishing, the cylinder is drivento lift the polishing head 40, and the polishing head support part 6 isrotated 90° to the right to move the polishing 40 to the second stage 4.

When the polishing head 40 is moved to the second stage 4, identical tothe action of the first stage 3, the polishing head 40 is lowered topolish the wafer 30. The point of difference with the first stage 3 interms of the processing conditions lies in the fact that the waferpressurizing force and pressurizing force are taken as 2 g/mm²respectively, and a polishing time of 2 minutes is adopted.

Following the coarse polishing, the cylinder is driven to lift thepolishing head 40 and the polishing head support part 6 is rotated 180°to the right to move the polishing head 40 to the load/unload stage 2.

In order to prevent the introduction of the abrasive grain for coarsepolishing into the final polishing stage when the polishing head 40 ismoved to the load/unload stage 2, the abrasive grain that attaches tothe polishing head 11 in coarse polishing is washed for 10 seconds bydistilled water or ozone water using a jet water flow jetted from anozzle.

Following the completion of the washing of the polishing head 40, thepolishing head support part 6 is rotated 90° to the left moving thepolishing head 40 to the third stage 5.

Here, because of the low wafer pressurizing force in the final polishingstep of low 1 g/mm², the immersion of the wafer 30 in the final abrasivecloth 26 is negligible. Accordingly, there is no generation of theproblem of a concentration of elastic stresses from the final abrasivecloth 26 on the edge of the wafer 30 resulting in excessive polishing ofthe wafer peripheral part. In addition, because the actual polishingamount is small, there is no need for the use of a retainer ring 43.Thereupon, in the course of the movement to the third stage 5 thepressure within the air chamber 48 is released and the retainer ring 43is caused to retract upward. The extent of this movement is designed tobe 5 mm. This is to prevent the abrasive grain for coarse polishingattached to the retainer ring 43 from being introduced into the finalpolishing stage.

When the polishing head 40 is moved to the third stage 5 theelectro-pneumatic regulator W is driven and compressed air of pressuregreater than the air pressure is supplied to the air chamber 49 by wayof the wafer pressurizing pipe 33 from the compressed air pump 58, and astate in which the air chuck 19 is pushed uniformly across its entiretyat a pressure of 1 g/mm² by the air of the air chamber 49 is maintained.Thereafter, the polishing head 40 and polishing plate 24 are relativelyrotated by the drive of polishing head rotating motor and polishingplate rotating motor, and the polishing liquid is supplied through thepolishing liquid supply nozzle. In this state a cylinder not shown inthe diagram is driven to lower the polishing head 40 until the wafer 30contacts the final abrasive cloth 26. The wafer 30 is subjected to auniform pressure of 1 g/mm² across its entire surface and pushed againstthe final abrasive cloth 26 for implementation of the final polishing ofthe target surface for polishing.

Because the bellows 46 are produced from Hastelloy and thereforeexpandable the wafer chuck 19 can be oscillated and centered to conformto the surface shape of the final abrasive cloth 26. Accordingly, thewafer 30 is constantly in parallel with the final abrasive cloth 26 andthe wafer is pushed at a uniform pressure across its entirety by thefinal abrasive cloth 26.

Examples of the polishing liquid that can be employed for the finalpolishing include slurries composed of a mixture of an abrasive grainfor final polishing of SiC or SiO or the like of diameter of the orderof 5 to 500 nm and a water-based or oil-based liquid. In this way, thepolishing head 40 and polishing plate 24 are relatively rotated whilethe polishing liquid is supplied, and the final polishing of the wafer30 is implemented for 5 minutes.

Following the completion of the final polishing the cylinder is drivento lift the polishing head 40, the polishing head support part 6 isrotated 90° to the right, and the polishing head 40 is moved to theload/unload stage 2.

When the polishing head 40 is moved to the load/unload stage 2 a carryhand not shown in the diagram of the wafer carry device 8 is moveddirectly below the wafer chuck 19. Next, when the vacuum pump 56 isstopped, the adsorption force of the wafer chuck 19 is released and thewafer 30 adsorbed to the wafer chuck 19 is loaded on the carry hand. Thesteps for the polishing of the wafer 30 are completed in accordance withthe above.

The polishing apparatus 1 of the abovementioned first and secondembodiments shown in FIG. 1 facilitates a polishing of the wafer 30 inthe stages 3 to 5 in parallel and, because the final polishing can beimplemented at the third stage 5 while coarse polishing of the wafer 30is being implemented at the first stage 3 and the second stage 4, theoperating efficiency thereof is good.

In addition, although both the polishing head 40 and the polishing plate24 of the polishing apparatus 1 are rotated to polish the wafer 30 forthe purpose of preventing asymmetry of the wafer 30, polishing that isimplemented on the basis of the rotation of one of these two is alsopossible.

Although, in the abovementioned first embodiment, a plate rubber and aplate spring are adopted as the material for the airbag 15 and, in thesecond embodiment, Hastelloy, which is a type of metal, is adopted asthe material for the bellows 45, 46, the materials for employment are inno way restricted thereto and, provided they are elastically deformableby a flow pressure such as air pressure, plastics or other materials maybe employed. It should be noted that a sheet that deforms elasticallydue to air pressure may be employed instead of the airbag 15.

In addition, there are no particular restrictions to the implementationof these embodiments with regard to the material of the wafer 30 and thesize thereof and, apart from semiconductor wafers 30 of the numericalaperture currently manufactured such as silicon, GaAs, GaP and InP orthe like, the present invention can have application in very largewafers 30 for which manufacture in the future is anticipated.

Embodiment 3

Next, a description will be given of a third embodiment with referenceto FIG. 9 and FIG. 10. FIG. 9 and FIG. 10 are vertical cross sections ofa dual series airbag system polishing head 60 pertaining to a thirdembodiment of the present invention. FIG. 9 shows a state in which theretainer is lowered and FIG. 10 shows a state in which the retainer islifted.

The dual series airbag system polishing head 60 comprises a shaft 68,frame 69, wafer chuck 19, retainer frame 66 and retainer ring 23 and thelike. The symbol 68 in the diagram refers to a cylindrical hollow shaft,and a frame 69 is fixed to the periphery of the shaft 68.

A toroidal retainer-fixing piece 70 is fastened to the top of theretainer ring 23 by a bolt 71. The retainer-fixing piece 70 is furtherfastened to a retainer frame 66 by a bolt 72. A flexible plate spring 74and plate rubber 73 are tensioned between the retainer-fixing piece 70and the retainer frame 66, and a second airbag 75, formed as an airtightspace, is formed by the retainer frame 66 and plate rubber 73. A waferpressurizing pipe 76 is formed in the second airbag 75 passing throughthe shaft 68, and compressed air is supplied to the second airbag 75through a supply port 76 a of the wafer pressurizing pipe 76.

The wafer chuck 19 is fixed to the center of the lower surface of theplate spring 74. The wafer chuck 19 which, by the screwing of a bolt 78through the top of the plate rubber 73 by way of a plug piece 77, isfixed in a state in which the plate spring 74 and the plate rubber 73tensioned in a plate shape are sandwiched between the plug piece 77 andthe wafer chuck 19. A flange-like mechanical stopper 77 a is provided inthe periphery of the plug piece 77 which, when the wafer chuck 19 islowered with respect to the retainer frame 66, latches with the retainerframe 66 to function as a stopper that indicates the stroke end.

An exhaust plug 82 is attached to the center of the upper part of thewafer chuck 19. The exhaust plug 82 is connected to an exhaust pipe 79passing through a shaft 68, and pressure reduction within the waferchuck 19 is implemented on the basis of exhaustion by way of the exhaustpipe 79. In the pressure-reduced state the wafer is vacuum-adsorbed tothe adsorption surface that is formed on the lower surface of the waferchuck 19.

A disc-shaped plate material 80 composed of a flexible material istensioned between the retainer frame 66 and the frame 69. A first airbag81 is formed in an airtight space enclosed by the frame 69, platematerial 80 and retainer frame 66. Compressed air is supplied through ahollow hole 68 a of the shaft 68 into the first airbag 81. A flange-likemechanical stopper 66 a, which is provided in the retainer frame 66 insuch a way as to latch to the frame 69, functions as a stopper toindicate the stroke end when the retainer frame 66 is lowered withrespect to the frame 69.

In this way, in the polishing head 60 of this embodiment, the firstairbag 81 and second airbag 75 are arranged in series in a overlappedstate.

Next, a description will be given of the operation of the polishing head60 of this embodiment. When compressed air is supplied through thehollow hole 68 a of the shaft 68 and a load P1 is applied to the firstairbag 81, a load is applied to the retainer frame 66 and the waferchuck 19 and the retainer ring 23 are integrally lowered. At this time,when a compressed air is supplied from the wafer pressurizing pipe 76and a load P2 is applied to the second airbag 75, a load P2 is appliedto the wafer chuck 19 and a load P3 (=P1-P2) is applied to the retainerring 23.

FIG. 10 illustrates the state in which the retainer ring 23 is lifted.Based on the dual series structure of this embodiment, the retainer ring23 can be lifted by establishing the load P2 on the second airbag to belarger than the load P1 on the first airbag.

By way of example, when there is a desire to set the chuck load to 0.03MPa and the retaining load to 0.03 MPa during coarse polishing, the loadP1 on the first airbag 81 should be set to 0.043 MPa and the load P2 onthe second airbag 75 should be set to 0.03 MPa. At this time, becausethe mechanical stopper 77 a is not engaged to the retainer frame 66 asshown in FIG. 9, it does not function as a stopper and, in addition,with the exception of the plate member 80, plate spring 74 and the platerubber 73, the plug piece 77, frame 69 and retainer frame 66 arearranged with a prescribed clearance there-between and the wafer chuck19 and retainer ring 23 can be independently oscillated.

In addition, because the coarse polishing abrasive grain is notintroduced into to the final polishing stage during final polishing, thepolishing must be performed in a state in which the retainer ring isfloating with respect to the final abrasive cloth. By way of example,when there is a desire in final polishing for the chuck load to be setto 0.015 MPa and the retaining load to be set to 0.00 MPa (floatingstate), the load P1 on the first airbag 81 should be set to 0.015 MPaand the load P2 on the second airbag 75 should be set to 0.020 MPa.

When a load P2 on the second airbag 75 is established that is largerthan the load P1 on the first airbag 81, the wafer chuck 19, as is shownin FIG. 10, is lowered with respect to the retainer frame 66 until thestroke end. At this time, because the wafer chuck 19 is in a latchedstate with the retainer frame 66 by means of the mechanical stopper 77a, the pressurized force of the second airbag 75 is applied as aninternal force and does not contribute to the chuck pressure. Because,as a result, only the load P1 of the first airbag 81 is applied on thewafer chuck 19, the chuck load can be easily controlled by thesettability of the load P1.

Based on this embodiment, because the wafer chuck 19 and the retainerring 23 can be independently oscillated using two airbags arranged inseries, a worsening of the flatness of the wafer edge part andproduction of a wafer polished shape that is asymmetric can beprevented.

In addition, the outside diameter of the polishing head can be reducedby the arrangement of the retaining pressure mechanism and the chuckpressure mechanism in series. Because, as a result, the surface areaacross which the polishing apparatus is arranged can be reduced, therunning costs can be lowered. Furthermore, because the polishing headcan be compacted and weight-lightened, the time required for thereplacement of a polishing head can be significantly shortened.

It should be noted that, although there is no mechanism provided in thepolishing head 60 of FIG. 9 and FIG. 10 to independently rotate theretainer ring 23 with respect to the wafer chuck 19, a bearing mechanismmay be provided between the retainer-fixing piece 70 and retainer ring23 to independently rotate the retainer ring 23 and wafer chuck 19. Inaddition, the rotating mechanism of the polishing head 60 may beprovided in the upper part of the shaft 68 to rotate everything belowand including the shaft 68, or a mechanism may be adopted in which theshaft 68 does not rotate and the wafer chuck 19 rotates together withthe retainer frame 69.

Embodiment 4

Next, a description will be given of a fourth embodiment with referenceto FIGS. 11 to 13. FIGS. 11 to 13 are partial vertical cross sections ofan air cylinder+airbag system polishing head 90 pertaining to a fourthembodiment of the present invention. FIG. 11 is a vertical cross sectionof the polishing head 90 in detail, FIG. 12 illustrates the state inwhich the retainer is lowered, and FIG. 13 illustrates the state inwhich the retainer is lifted.

The air cylinder+airbag system polishing head 90 of the presentembodiment comprises a shaft 91, wafer chuck 19, retainer frame 92 andretainer ring 23 and so on. The symbol 91 in the diagram refers to ahollow cylindrical shaft, and a retainer frame 92 is provided on theperiphery of the shaft 91.

The inner circumferential surface of a spherical-surface bearing 93 isfixed to the outer circumferential surface of the shaft 91, and theretainer frame 92 is fixed to the outer circumferential surface of thespherical-surface bearing 93. The shaft 91 and the retainer frame 92 arecoupled in such a way as to be able to oscillate smoothly by means ofthe spherical-surface bearing 93.

A toroidal retainer-fixing piece 70 is fastened to the top of theretainer ring 23 by a bolt 71. The retainer-fixing piece 70 is furtherfastened to the retainer frame 92 by a bolt 72. A flexible plate spring74 and plate rubber 73 are tensioned between the retainer-fixing piece70 and the retainer frame 92, and an airbag 94, formed as an airtightspace, is formed by the retainer frame 92 and plate rubber 73.Compressed air is supplied to the airbag 94 through a supply port 91 aof the shaft 91.

The wafer chuck 19 is fixed to the center of the lower surface of theplate spring 74. By the screwing of a bolt 78 through the top of theplate rubber 73 by way of a plug piece 77, the wafer chuck 19 is fixedin a state in which the plate spring 74 and the plate rubber 73tensioned in a plate shape are sandwiched between the plug piece 77 andthe wafer chuck 19. A flange-like mechanical stopper 77 a is provided inthe periphery of the plug piece 77 which, when the wafer chuck 19 islowered with respect to the retainer frame 92, latches with the retainerframe 92 to function as a stopper to indicate the stroke end.

It should be noted that, with the exception of the plate spring 74 andthe plate rubber 73, the plug piece 77 and retainer frame 92 arearranged with a prescribed clearance there-between and the wafer chuck19 and retainer frame 92 can be oscillated independently.

An exhaust pipe 79 is connected to the plug piece 77 passing though theshaft 91, and pressure reduction of the wafer chuck 19 is implemented byexhaustion by way of the exhaust pipe 79. In the pressure-reduced statethe wafer is vacuum-adsorbed to the adsorption surface formed on thelower surface of the wafer chuck 19.

The shaft 91 is further linked to a cylinder 95 at the upper partthereof. Cylinders that can be employed as the cylinder 95 include afluid cylinder or liquid cylinder such as an hydraulic cylinder, and agas cylinder such as an air cylinder. The shaft 91 is vertically movedtogether with the retainer frame 92 and the wafer chuck 19 by the actionof the cylinder 95.

In this way, in the polishing head 90 of this embodiment, the airbag 94and cylinder 95 are arranged in series in a overlapped state.

Next, a description will be given of the operation of the polishing head90 of this embodiment with reference to FIG. 12 and FIG. 13. As shown inFIG. 12, when a load P1 is applied to the shaft 91 by the cylinder 95, aload is applied to the retainer frame 92 and the wafer chuck 19 and theretainer ring 23 are integrally lowered. At this time, when compressedair is supplied through a hollow hole 91 a of the shaft 91 shown in FIG.11 and a load P2 is applied to the airbag 94, a load P2 is applied tothe wafer chuck 19 and a load P3 (=P1-P2) is applied to the retainerring 23.

FIG. 13 illustrates the state in which the retainer ring 23 is lifted.Based on the air cylinder+airbag system of this embodiment, the retainerring 23 can be lifted by establishing the load P2 on the second airbag94 to be larger than the load P1 of the cylinder 95.

When the load P2 on the airbag 94 is larger than the load P1 of thecylinder 95, as is shown in FIG. 13 the wafer chuck 19 is lowered withrespect to the retainer frame 92 until the stroke end. At this time,because the wafer chuck 19 is in a linked state with the retainer frame92 by means of the mechanical stopper 77 a, the pressure force of theairbag 94 is applied as an internal force and does not contribute to thechuck pressure. Because, as a result, only the load P1 of the cylinder95 is applied to the wafer chuck 19, the chuck load can be easilycontrolled by the settability of the load P1.

Based on this embodiment, because the wafer chuck 19 and the retainerring 23 are independently oscillated by a retainer frame 92 that isoscillatably connected to the shaft 91 and a wafer chuck 19 isoscillatably provided with respect to the retainer frame 92, a worseningof the flatness of the wafer edge part and production of a waferpolished shape that is asymmetric can be prevented.

In addition, the outside periphery of the polishing head can be reducedby the arrangement of the retaining pressure mechanism and the chuckpressure mechanism in series. Because, as a result, the surface areaacross which the polishing apparatus is arranged can be reduced, therunning costs can be lowered. Furthermore, because the polishing headcan be compacted and weight-lightened, the time required for thereplacement of a polishing head can be significantly shortened.

It should be noted that, although there is no mechanism provided in thepolishing head 90 of FIGS. 11 to 13 to independently rotate the retainerring 23 with respect to the wafer chuck 19, a bearing mechanism may beprovided between the retainer-fixing piece 70 and retainer ring 23 toindependently rotate the retainer ring 23 and wafer chuck 19. Inaddition, the rotating mechanism of the polishing head 90 may beprovided in the upper part of the shaft 91 to rotate everything belowand including the shaft 91, or a mechanism may be adopted in which theshaft 91 does not rotate and the wafer chuck 19 rotates together withthe frame 92.

Although the description given in the first to fourth embodimentsdescribed above pertains to the employment of a toroidal retainer ring,the retainer ring is not restricted thereto and it may be provided as aplurality of blocks fixed in a toroidal shape around the retainer frame.In addition, the lower surface of the retainer ring may be flat, or itmay comprise a plurality of grooves.

In addition, in the first to fourth embodiments described above, withoutthe implementation of the retraction of the retainer ring in the finalpolishing step, the pressurizing force may be established as apressurizing force that is smaller than the pressurizing force of thecoarse polishing step, by way of example, as a force of the same orderas the wafer pressurizing force. If the pressurizing forces areestablished in this way the final polishing step can be implementedwithout worsening of the wafer flatness produced in the coarse polishingstep.

That is to say, in the final polishing step of the present invention,the retainer ring may either be retracted or a weakened retainer ringpressurizing force may be used.

Accordingly, the invention of this application is not restricted to theembodiments described above and, within a range that is not beyond thegist of the invention, a range of applications and modifications can bemade to, for example, the method for supporting the retainer ring andthe wafer chuck, the method for the polishing the wafer, and thepolishing target material.

[Working Data]

A specific description is given below, with reference to FIGS. 6A to 6C,of the results of the polishing of a wafer employing the wafer polishingapparatus of the prior art that does not comprise a retainer ring, andthe polishing of a wafer employing the wafer polishing apparatus of theinvention of this application.

A sub-flatness SFQR, which is used as a standard for comparison of theflatness of wafers, was employed. The SFQR was found by the sampling ofa plurality of square shapes of prescribed dimensions from the wafer,the finding of the difference between the samples and the desired waferthickness, and the calculating of the average value of these samples.

In FIG. 6A, which shows the results of the polishing of a wafer usingthe wafer polishing apparatus of the prior art that does not comprise aretainer ring, the SFQR of the elemental material wafer prior topolishing is expressed on the horizontal axis and the SFQR of the waferfollowing polishing is expressed on the vertical axis. As is clear fromthe graph, the flatness of the wafer following polishing is worse thanthe flatness of the elemental material wafer. This is because, as thereis no retainer ring provided, a deterioration of the flatness of theperipheral part occurs.

In contrast thereto, FIG. 6B shows the results of the polishing of awafer employing the wafer polishing apparatus pertaining to the presentinvention in which the SFQR of the elemental material wafer prior topolishing is expressed on the horizontal axis and the SFQR of the waferfollowing polishing is expressed on the vertical axis. As is clear fromthe graph, the flatness of the elemental material wafer followingpolishing is maintained. This is because, due to the provision of aretainer ring, the flatness of the peripheral part of the wafer can bemaintained.

On the other hand, in FIG. 6C, the distance between the retainer ringand the wafer of the wafer polishing apparatus pertaining to theinvention of this application is expressed on the horizontal axis andthe SFQR of the wafer following polishing is expressed on the verticalaxis. It is clear from this graph that the optimum distance between theretainer ring and the wafer is between 0.5 mm and 2.0 mm.

As is described above, based on the wafer polishing apparatus of thepresent invention, by virtue of the fact that the wafer chuck and theretainer ring can be independently pressurized to respectively optimumpressures, the flatness of the wafer edge part in the coarse polishingfor engendering flatness can be improved.

In addition, based on the wafer polishing apparatus of the presentinvention, because the retainer ring is retracted from the polishingsurface in final polishing, contamination of the final stage as a resultof the introduction of the coarse polishing abrasive grain can beprevented. Accordingly, because the final polishing step and the coarsepolishing step can be continuously implemented using the same polishinghead, a reduction in apparatus costs can be achieved.

Furthermore, in a first embodiment of the invention of this application,by virtue of the fact that the retracting mechanism of the retainer ringcan be actualized mechanically by the use of springs or the like, evenwhen the retaining pressurizing pipe is disconnected the retainer ringcan be moved to the retracted position to prevent contamination of thefinal polishing stage.

In addition, although deterioration of the wafer edge part andproduction of a polished wafer of an asymmetric shape occurs using thewafer polishing apparatus of the prior art because the retainer ringcannot be oscillated, these problems do not arise with the waferpolishing apparatus of the present invention because the wafer chuck andthe retainer ring are independently oscillated.

Furthermore, based on the wafer polishing apparatus of the presentinvention, the deterioration in wafer flatness that has its origins inthe precision processing of the retaining member can be prevented by therelative rotation of the wafer chuck and the retainer ring.

In addition, based on the wafer polishing apparatus of the presentinvention, the processing in the final polishing step and the coarsepolishing step of a sheet polishing apparatus can be implemented using acommon polishing head, and the time required for the polishing steps canbe markedly lowered.

In addition, based on the wafer polishing apparatus of the presentinvention, the wafer affixed to the wafer chuck at a prescribed positionprecision does not contact the retainer ring during oscillation andmechanical damage to the wafer edge can be avoided.

INDUSTRIAL APPLICABILITY

The present invention can be utilized in the field of mirror-surfacepolishing in which the surface of semiconductor wafers and liquidcrystal substrates and so on are flattened.

1. A polishing apparatus for performing a polishing operationcomprising: a polishing plate provided with an abrasive cloth; a chuckfor holding a polishing target material to bring the polishing targetmaterial into contact with the abrasive cloth; a head body fixed to arotary drive shaft having reciprocal movement in a plane, for holdingand rotatably driving the chuck; and a retainer ring supported by thehead body in a periphery of the chuck, the polishing target materialbeing polished by the abrasive cloth by a relative motion of thepolishing plate and the chuck, characterized in that the polishingapparatus includes: supporting means for supporting the retainer ringand the chuck respectively to the head main body so that the retainerring and the chuck can be moved in a direction of the rotary drive shaftand in a direction perpendicular to the direction of the rotary driveshaft independently of each other; and means for restricting movementsof the retainer ring and the chuck so as to maintain a fluctuation ofthe size of a gap that is perpendicular to the direction of the rotarydrive shaft between the retainer ring and the chuck within apredetermined range during the polishing operation.
 2. A polishingapparatus according to claim 1, characterized in that the retainer ringis movable perpendicular to the direction of the rotary drive shaft withrespect to the chuck.
 3. The polishing apparatus according to claim 1,characterized in that one or a plurality of clearances to facilitate anoscillation are provided.
 4. The polishing apparatus according to claim1, characterized in that the range of the gap is between 0.5 mm and 2.0mm.
 5. The polishing apparatus according to claim 4, characterized inthat the distance between the center of the chuck and the center of thepolishing target material is no more than 0.5 mm.
 6. The polishingapparatus according to claim 1, characterized in that the retainer ringis rotatable with respect to the chuck.